Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substrates

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Abstract
The amount of carbon in GaAs and (Al,Ga)As films depends on the orientation of crystals grown by metalorganic chemical vapor deposition. We investigated the relation between the incorporation of carbon and the orientation of crystals using (100), (311)A, and (311)B substrates. The concentration of electrons on (311)B substrates of unintentionally doped films was higher than those of the films on (100) and (311)A substrates. The films grown on (311)B substrates did not show p‐type behavior even when they were grown with a fairly low V/III ratio. The relative intensity of the free‐to‐carbon acceptor luminescence of the films grown on (311)B substrates was smaller than that of films grown on the other substrates. This is consistent with the results of carbon contamination indicated by secondary ion mass spectra. Furthermore, a reduced peak in photoluminescence caused by defects was observed when (311)B substrates were used.

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