Dechanneling by dislocations in ion-implanted Si

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Abstract
A detailed study of dechanneling by dislocations has been carried out. Dechanneling measurements on dislocations produced by ion implantation in silicon were performed as a function of incident energy, charge number of particles, target temperature, and channeling direction. Concentration and structure of dislocations were determined by TEM The theoretical dependences of the dechanneling by dislocations from ion energy and charge number are confirmed experimentally. The results show, that Quërts model overestimates the dechanneling in the axial case by a factor of about 4–5. A better consistence between experimental and theoretical results is received using van Vliet's model which also describes the measured temperature dependence of axial dechanneling. For planar dechanneling a good agreement is found between experimental and theoretical results. The detection limit for dislocations is determined to about 2 × 109 dislocations per cm2 in the axial case, whereas for planar channeling 2–4 × 108 dislocations per cm2 should be still detectable.

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