n-Type silicon at 77 K : hot carrier noise and not generation recombination noise
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 715-717
- https://doi.org/10.1051/rphysap:019780013012071500
Abstract
The experimental excess noise current in n-Si at 77 K is compared with the theoretical generation-recombination (GR) noise. The discrepancy between the theory and the experiment shows that the usual formalism describing the GR noise is not valid in that case. The observed noise is either hot carrier diffusion noise, eithe hot carrier GR noise, that is GR noise with electric field dependent parametersKeywords
This publication has 4 references indexed in Scilit:
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- Experimental determination of highly concentration-sensitive effects of intervalley electron-electron scattering on electric-field-dependent repopulation in n-Si at 77 KApplied Physics Letters, 1974
- Analysis of the thermal noise behaviour in JG FET at low temperaturePhysica, 1971
- Field-dependent mobility analysis of the field-effect transistorProceedings of the IEEE, 1965