Some predicted properties of amorphous semiconductors with undulatorily-graded band edges
- 1 June 1972
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 8-10, 516-521
- https://doi.org/10.1016/0022-3093(72)90186-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Phase separation in amorphous chalcogenidesJournal of Non-Crystalline Solids, 1972
- Extended and localized electronic states for the undulatorily-graded band-gap model of amorphous semiconductorsJournal of Non-Crystalline Solids, 1971
- Amorphous Semiconductors as Undulatorily Graded Band-Gap SystemsPhysical Review Letters, 1970
- Polaronic effects in potassium vanadium phosphate glassesJournal of Non-Crystalline Solids, 1970
- Experimental results in amorphous semiconductor switching behaviorJournal of Non-Crystalline Solids, 1970
- Di-phasic structure of switching and memory device ‘glasses’Solid State Communications, 1969
- Short-range order in amorphous germaniumJournal of Non-Crystalline Solids, 1969
- Theory of Electronic States and Transport in Graded Mixed SemiconductorsPhysical Review B, 1969
- Electronic Transport in Graded-Band-Gap SemiconductorsAmerican Journal of Physics, 1967
- Metastable Liquid Immiscibility and Subsolidus NucleationJournal of the American Ceramic Society, 1960