Microwave performance of AlGaN/GaN high electron mobility transistors on Si(111) substrates
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Visible-blind GaN Schottky barrier detectors grown on Si(111)Applied Physics Letters, 1998
- Ultraviolet and violet GaN light emitting diodes on siliconApplied Physics Letters, 1998
- A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substratesIEEE Transactions on Electron Devices, 1988