Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 390-396
- https://doi.org/10.1016/0169-4332(87)90116-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometryThin Solid Films, 1987
- SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15NNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditionsVacuum, 1985
- SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into siliconNuclear Instruments and Methods in Physics Research, 1983