Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometry
- 1 April 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 148 (2) , 127-134
- https://doi.org/10.1016/0040-6090(87)90150-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditionsVacuum, 1985
- Nondestructive depth profiling by spectroscopic ellipsometryApplied Physics Letters, 1985
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into siliconVacuum, 1984
- Nondestructive analysis of Si3N4/SiO2/Si structures using spectroscopic ellipsometryJournal of Applied Physics, 1981