Synthesis of thin-film ferroelectrics on Si and shape memory effect TiNi substrates
- 1 June 1994
- journal article
- Published by IOP Publishing in Smart Materials and Structures
- Vol. 3 (2) , 140-146
- https://doi.org/10.1088/0964-1726/3/2/009
Abstract
Synthesis and characterization of ferroelectric multilayers are described. These multilayers possess both active and adaptive properties and so represent an initial attempt to manufacture multilayers that are considered to be smart. In this investigation, deposition and processing of thin-film effect TiNi and thin-film ferroelectric BaTiO3 SrTiO3 and Pb(Zr,Ti)O3 are discussed. Growth conditions as well as the thermodynamic conditions for successful synthesis using sol-gel techniques are described. It was found that amorphous thin films of TiNi and BaTiO3 can be crystallized simultaneously by air annealing at 600 degrees C. Pb(Zr,Ti)O3 was synthesized successfully onto bulk TiNi samples with good mechanical bonding.Keywords
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