Pore morphology and the mechanism of pore formation in n-type silicon

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Abstract
Porous layers formed in n‐type silicon are characterized by pores of square cross section oriented perpendicular to the (100) plane. The pore walls are defined by the {011} planes in the [100] zone with secondary pores propagating from the main pores in the 〈010〉 and 〈001〉 directions. The pores are located in an array with a characteristic spacing. The characteristic pore morphology during stable pore propagation is explained in terms of a tunneling mechanism due to a high‐field region created by the curvature at the pore front. The pore spacing is determined by the distance at which the region between the pores becomes fully depleted.