Electronic properties of iron-doped GaAs1-xPx

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Abstract
Photo-ionisation cross-section spectra for holes have been studied in iron-doped GaAs1-xPx and optical threshold energies for the transitions from the iron levels into the valence band have been determined for a large range of compositions. The relative position of the states and the crystal-field-splitting energies were found to increase with increasing x. The ratio of the optical transition probabilities from the ground and excited state into the valence band changes for varying compositions almost symmetrically about the mid-point x=0.5. By studying thermal emission and capture rates, nonexponential dark-capacitance transients were obtained. Apparent thermal activation energies showed a dependence on x different from that of the optical data. The variation of the iron levels with x can be understood within the framework of the vacuum level reference hypothesis.

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