Properties of aluminum nitride films obtained by reactive evaporation
- 1 June 1973
- journal article
- Published by Springer Nature in Russian Physics Journal
- Vol. 16 (6) , 877-879
- https://doi.org/10.1007/bf00895716
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERSApplied Physics Letters, 1968
- Dielectric Properties of Films Formed by Vacuum Evaporation of Silicon MonoxideJournal of Applied Physics, 1967
- Deposition of Oxide Films by Reactive EvaporationJournal of Vacuum Science and Technology, 1966