Effect of Carbon on Formation of Electron-Irradiation-Induced Secondary Defects in Silicon
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1R)
- https://doi.org/10.1143/jjap.25.159
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High voltage electron microscope study of defects in siliconPhysica B+C, 1983
- {113} Loops in electron-irradiated siliconPhilosophical Magazine A, 1979
- Nature of Secondary Defects in Silicon Produced by High Temperature Electron IrradiationJapanese Journal of Applied Physics, 1979
- A simple method for the analysis of dislocation loops by means of the inside-outside contrast on transmission electron micrographsPhysica Status Solidi (a), 1975
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973