The effect of substrate position on the orientation and interfacial reaction of epitaxial diamond on silicon
- 30 April 1996
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 5 (3-5) , 326-331
- https://doi.org/10.1016/0925-9635(95)00356-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Atomic-force-microscopic study of heteroepitaxial diamond nucleation on (100) siliconApplied Physics Letters, 1993
- Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxyApplied Physics Letters, 1993
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growthJournal of Materials Research, 1993
- Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor depositionApplied Physics Letters, 1993
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleationApplied Physics Letters, 1993
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Generation of diamond nuclei by electric field in plasma chemical vapor depositionApplied Physics Letters, 1991