Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition

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Abstract
A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron-doped layer for electrical characterization. Temperature-dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/V⋅s hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X-ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.