Effect of strain on CHSH Auger recombination in strained In/sub 0.53+x/Ga/sub 0.47-x/As on InP
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (10) , 2583-2588
- https://doi.org/10.1109/3.250379
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Theoretical studies of the effect of strain on the performance of strained quantum well lasers based on GaAs and InP technologyIEEE Journal of Quantum Electronics, 1991
- InGaAs/InP quantum well lasers with sub-mA threshold currentApplied Physics Letters, 1990
- Auger effects in acceptor-doped long-wavelength strained quantum well lasersApplied Physics Letters, 1989
- Low Threshold Current InP-Based Strained-Layer 1.55µm LasersPublished by SPIE-Intl Soc Optical Eng ,1988
- Auger recombination in low-dimensional structuresJournal of Physics and Chemistry of Solids, 1988
- Band-to-band Auger recombination in semiconductorsJournal of Physics and Chemistry of Solids, 1988
- Theory of photoabsorption in modulation-doped semiconductor quantum wellsPhysical Review B, 1987
- Photoluminescence study of InxAl1−xAs-GaAs strained-layer superlatticesJournal of Applied Physics, 1986
- Auger transitions in semiconductors and their computationJournal of Physics C: Solid State Physics, 1985
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955