Critical layer thicknesses for inclined dislocation stability in multilayer structures
- 15 August 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (4) , 1386-1394
- https://doi.org/10.1063/1.351750
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- The energy of an array of dislocationsPhilosophical Magazine A, 1991
- Interactions of misfit dislocations in InxGa1-xAs/GaAs interfacesPhilosophical Magazine A, 1991
- A new type of misfit dislocation multiplication process in InxGa1−xAs/GaAs strained-layer superlatticesPhilosophical Magazine Letters, 1991
- The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructuresPhilosophical Magazine A, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si systemJournal of Vacuum Science & Technology A, 1989
- I n s i t u observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructuresApplied Physics Letters, 1988
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Forces acting on misfit dislocations during interdiffusionPhilosophical Magazine, 1973
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949