Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes
- 1 January 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (1) , 97-101
- https://doi.org/10.1088/0268-1242/13/1/015
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser DiodesMRS Internet Journal of Nitride Semiconductor Research, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodesApplied Physics Letters, 1996
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Ridge-geometry InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996
- Characteristics of InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996
- Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1996
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity FacetsJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995