Reduction of the intrinsic base collector capacitance due to differential space charge effects in InP-GaInAs heterojunction bipolar transistors
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Analytical study of collector-base capacitance and cutoff frequency of n+-p-n-n+ bipolar junction transistorsSolid-State Electronics, 1994
- Current dependence of base-collector capacitance of bipolar transistorsSolid-State Electronics, 1992