Analytical study of collector-base capacitance and cutoff frequency of n+-p-n-n+ bipolar junction transistors
- 28 February 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (2) , 311-318
- https://doi.org/10.1016/0038-1101(94)90083-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Current dependence of base-collector capacitance of bipolar transistorsSolid-State Electronics, 1992
- Collector optimization for high-speed bipolar transistorsIEEE Transactions on Electron Devices, 1992
- The effects of carrier-velocity saturation on high-current BJT output resistanceIEEE Transactions on Electron Devices, 1992
- Explicit analytical expressions for intrinsic base resistance and cutoff frequency of bipolar transistors biased at high injectionSolid-State Electronics, 1991
- Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT'sJapanese Journal of Applied Physics, 1990
- Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operationIEEE Electron Device Letters, 1988
- Base-collector junction capacitance of bipolar transistors operating at high current densitiesIEEE Transactions on Electron Devices, 1987