Effect of surface states on the barrier height in a MIS diode in the presence of inversion
- 1 May 1985
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 58 (5) , 775-779
- https://doi.org/10.1080/00207218508939069
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effect of inversion on barrier height in a metal-SiO2-Si tunnel systemSolid-State Electronics, 1984
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965