Effect of inversion on barrier height in a metal-SiO2-Si tunnel system
- 1 December 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (12) , 1057-1060
- https://doi.org/10.1016/0038-1101(84)90044-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The barrier height change and current transport phenomena with the presence of interfacial layer in MIS Schottky barrier solar cellsSolid-State Electronics, 1980
- Barrier height enhancement in p-silicon MIS solar cellsIEEE Transactions on Electron Devices, 1976
- I-V characteristics for Silicon Schottky solar cellsProceedings of the IEEE, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965