Dependence of MOS transistor threshold voltage on substrate resistivity
- 30 June 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (6) , 611-616
- https://doi.org/10.1016/0038-1101(67)90142-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Field effect studies of the oxidized silicon surfaceSolid-State Electronics, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962