Growth kinetics of ultrathin SiO2 films fabricated by rapid thermal oxidation of Si substrates in N2O
- 15 July 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 1072-1074
- https://doi.org/10.1063/1.349701
Abstract
Growth kinetics of ultrathin SiO2 films formed by rapid thermal oxidizing Si substrates in N2O has been studied in this communication. Results show that the linear‐parabolic law still can be applied to the oxidation of Si in N2O and the interfacial nitrogen‐rich layers in these films result in oxide growth in the parabolic regime by impeding oxidant diffusion to the SiO2/Si interface even for ultrathin oxides. The parabolic rate constant B exhibits an activation energy of 1.42 eV, which is the activation energy for oxidant diffusion in the interfacial nitrogen‐rich layer.This publication has 12 references indexed in Scilit:
- Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2OApplied Physics Letters, 1990
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Thermionic emission model for the initial regime of silicon oxidationApplied Physics Letters, 1987
- Parallel Oxidation Mechanism for Si Oxidation in Dry O 2Journal of the Electrochemical Society, 1987
- Thin SiO2 insulators grown by rapid thermal oxidation of siliconApplied Physics Letters, 1985
- Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II . Physical MechanismsJournal of the Electrochemical Society, 1985
- The Growth and Characterization of Very Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1980
- Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeJournal of the Electrochemical Society, 1978
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965