Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP1−xSbx
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1472-1475
- https://doi.org/10.1063/1.341820
Abstract
The III‐V metastable alloy InP1−x Sbx has been grown for the first time with compositions well inside the miscibility gap. Despite the large miscibility gap at the growth temperatures of 480–600 °C, epilayers with compositions covering the entire range from x=0 to 1.0 have been grown successfully by organometallic vapor‐phase epitaxy at atmospheric pressure using the reactants trimethylindium, trimethylantimony, and phosphine. The 10‐K energy band gap as a function of composition was determined from photoluminescence measurements combined with x‐ray diffraction and electron microprobe analysis. The bowing parameter for the band‐gap energy of the InP1−x Sbx was estimated to be 1.9±0.1 eV. The lattice dynamics have been studied using Raman spectroscopy in the frequency range from 150 to 400 cm−1. Long wavelength optical phonons display a ‘‘two‐mode’’ behavior throughout the entire composition range. The InP‐like longitudinal‐optical and transverse‐optical modes shift to lower frequency with increasing Sb concentration.This publication has 14 references indexed in Scilit:
- Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbxApplied Physics Letters, 1988
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- GaAs1−xSbx growth by OMVPEJournal of Electronic Materials, 1984
- OMVPE growth of GaInAsJournal of Crystal Growth, 1983
- Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type A x B y C1−x−y DJournal of Applied Physics, 1983
- Calculation of energy band gaps in quaternary iii/v alloysJournal of Electronic Materials, 1981
- Organometallic VPE Growth of InAs1-x-ySbxPy on InAsJapanese Journal of Applied Physics, 1981
- InAsSbP-InAs Superlattice Grown by Organometallic VPE MethodJapanese Journal of Applied Physics, 1980
- Semiconductor Materials for 2∼4 µm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH LasersJapanese Journal of Applied Physics, 1980
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974