Study on the possibility of native oxide removal from GaP and GaAs surface by etching, using model experiments
- 1 January 1982
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (9) , 1129-1134
- https://doi.org/10.1002/crat.2170170910
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductorsApplied Physics Letters, 1981
- XPS study of chemically etched GaAs and InPJournal of Vacuum Science and Technology, 1981
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980
- GaAs Oxidation and the Ga‐As‐O Equilibrium Phase DiagramJournal of the Electrochemical Society, 1980
- Investigations of surface layers produced by chemical treatment of GaPThin Solid Films, 1979
- Role of oxygen in the mechanism of formation of Schottky diodesJournal of Applied Physics, 1978
- Chemical preparation of GaAs surfaces and their characterization by Auger electron and x-ray photoemission spectroscopiesJournal of Heterocyclic Chemistry, 1977
- Selective Etching of GaP Crystals with Hot Phosphoric AcidJournal of the Electrochemical Society, 1976
- Zum Mechanismus der Auflösung von Galliumarsenid durch OxydationsmittelZeitschrift für Physikalische Chemie, 1969
- Polymorphism of Ga2O3 and the System Ga2O3—H2OJournal of the American Chemical Society, 1952