Auger carrier capture kinetics in self-assembled quantum dot structures
- 5 January 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (1) , 58-60
- https://doi.org/10.1063/1.120643
Abstract
We establish rate equations to describe Auger carrier capture kinetics in quantum dot structures, calculate Auger capture coefficients for self-assembled quantum dots, and analyze Auger capture kinetics using these equations. We show that Auger capture times can be of the order of 1–100 ps depending on barrier carrier and dot densities. Auger capture rates depend strongly on dot diameters and are greatest at dot diameters of about 10–20 nm.Keywords
This publication has 16 references indexed in Scilit:
- Red-Emitting Semiconductor Quantum Dot LasersScience, 1996
- Rapid carrier relaxation in self-assembledAs/GaAs quantum dotsPhysical Review B, 1996
- Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dotsJournal of Applied Physics, 1996
- Room temperature lasing from InGaAs quantum dotsElectronics Letters, 1996
- Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)IEEE Photonics Technology Letters, 1996
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injectionIEEE Photonics Technology Letters, 1995
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Time-resolved optical characterization of InGaAs/GaAs quantum dotsApplied Physics Letters, 1994