Some new aspects for the evaluation of disorder profiles in silicon by backscattering

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Abstract
An attempt has been made to solve the four main problems arising with the investigation of disorder profiles in silicon which had been damaged by ion implantation. These problems are the dechanneling effect, the experimental energy resolution, the backscattering probability and the energy-depth-scale. The dechanneling analysis used is exact for single scattering of the analyzing particles. The integral dechanneling probability was found to increase with decreasing disorder density, which is in contrast to single and multiple scattering theory. Local defect structures may be responsible for this effect. The influence of the limited energy resolution of the experimental apparatus is taken into consideration by a somewhat varied deconvolution analysis. It is shown that the energy-dependence of the backscattering probability can be expressed by the Rutherford formula with sufficient accuracy. The evaluation of the energy-depth scale is based on experimental, energy dependent data for the stopping power of the analyzing particles in the sample.