Pulsed proton-beam annealing of Ir and IrxV100−x thin films on silicon
- 15 January 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 264-269
- https://doi.org/10.1063/1.334798
Abstract
A pulsed proton beam was used to anneal Ir and IrxV100−x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal‐Si interface. Phase identification was carried out by x‐ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current‐voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir2Si3 was detected in the reacted region. For the codeposited IrxV100−x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir : V ratio of the as‐deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.This publication has 16 references indexed in Scilit:
- Suicide Formation Resulting from the Interfacial Reaction of Silicon and Thin Films of Ir–V Alloys and BilayersPhysica Status Solidi (a), 1982
- Contact reaction of silicon and thin films of Ir-V alloysThin Solid Films, 1982
- Pulsed proton beam annealing: Semiconductors and silicidesNuclear Instruments and Methods in Physics Research, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Shallow silicide contactJournal of Applied Physics, 1980
- Microstructure and Schottky barrier height of iridium silicides formed on siliconJournal of Applied Physics, 1979
- Contact reaction between Si and Pd-W alloy filmsJournal of Applied Physics, 1979
- Silicide formation with Pd-V alloys and bilayersJournal of Applied Physics, 1979
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979