Fabrication of Metallic Structures in the 10 nm Region Using an Inorganic Electron Beam Resist
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S)
- https://doi.org/10.1143/jjap.32.6218
Abstract
In order to make the sub-10 nm region accessible to lithography, an ultrahigh-resolution electron beam resist has been developed. This inorganic and self-developing resist is based on AlF3-doped LiF films. The resolution limit is ≈3 nm lines & spaces. This result is in excellent agreement with a rule which gives a correlation between resolution and threshold energy of a resist. The sensitivity is sufficient for the fabrication of complex mesoscopic devices. The problems concerning pattern transfer are discussed. As a first result, metallic structures with lateral dimensions down to 10 nm have been obtained using a lift-off technique.Keywords
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