Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress
- 1 December 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (12) , 591-593
- https://doi.org/10.1109/55.974587
Abstract
The importance of low-field mobility to the performance of deep-sub-100-nm bulk MOSFETs is not well understood. In this work, we investigate experimentally how effective electron mobility at low lateral electric fields relates to velocity in the MOSFET saturation regime, where lateral fields in the channel are high. For short (L/sub eff//spl ap/45 nm) NMOS devices, mobility is modified by externally applying uniaxial stress and the corresponding shifts in electron velocity are found to be significant.Keywords
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