Electronic Raman Effect in Paramagnetic Crystals: Ce
- 15 February 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 178 (3) , 1518-1524
- https://doi.org/10.1103/physrev.178.1518
Abstract
We present a complete study of the electronic states of the configuration of Ce, using the electronic Raman effect. The use of this technique for studying far-infrared electronic states proved to be rather simpler than other methods, particularly when phonon states are nearby. The general features of the electronic Raman effect are discussed, including pseudovector scattering terms and asymmetric scattering intensity. Both of these latter effects have been observed in our experiments. The intensities of all lines have been calculated and are in reasonable agreement with the observations. In the case of the lines showing asymmetry in intensity, we can predict the orientation for maximum intensity as well as the magnitude of asymmetry. The phonon spectrum of Ce is briefly discussd. One of the phonon lines showed a small but definite asymmetry in intensity, which we are, at present, unable to explain. This particular phonon line seems to interact with the strongest electronic Raman line.
Keywords
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