Al/n-GaAs Schottky barrier height modified with rare-earth metal interlayer
- 1 December 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (11) , 6575-6577
- https://doi.org/10.1063/1.342032
Abstract
Schottky barrier heights are measured by current‐voltage and capacitance‐voltage methods for Al/n‐GaAs contacts with a rare‐earth metal (Sm, Dy, Yb) interlayer, which forms a stable alloy with Al but does not form an electrically active site in GaAs. The Schottky barrier height for each contact is found to be lowered with diode factor nn‐GaAs and rare‐earth metal/n‐GaAs contacts. The mechanisms for the lowering are discussed from standpoints of alloy formation and diffusion across the interface.This publication has 16 references indexed in Scilit:
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