A new method for the fabrication of submicron thick gallium arsenide membranes
- 1 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5) , 488-489
- https://doi.org/10.1063/1.94361
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A new self-limiting process for the production of thin submicron semiconductor filmsJournal of Applied Physics, 1983
- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980
- Preparation and properties of GaAs layers for novel f.e.t. structuresElectronics Letters, 1979
- Capless annealing of ion-implanted GaAsApplied Physics Letters, 1976
- The determination of foil thickness by scanning transmission electron microscopyPhysica Status Solidi (a), 1975
- Anodic dissolution of silicon in hydrofluoric acid solutionsSurface Science, 1966
- Über den Mechanismus der anodischen Auflösung von GalliumarsenidBerichte der Bunsengesellschaft für physikalische Chemie, 1965