Subthreshold model of a polycrystalline silicon thin-film field-effect transistor
- 2 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (5) , 290-292
- https://doi.org/10.1063/1.98228
Abstract
A model is presented for the subthreshold current versus gate voltage of a polycrystalline silicon thin‐film field‐effect transistor. It utilizes the experimentally observed exponential density of states of polycrystalline silicon grain boundaries and is based on an earlier model of M. Shur and M. Hack [J. Appl. Phys. 5 5, 3831 (1984)] which they applied to hydrogenated amorphous silicon. Experimental subthreshold curves are presented along with the corresponding curves predicted by the model. In addition current activation data are shown to fit the model. The primary fitting parameter is the density of states at the valence band.Keywords
This publication has 8 references indexed in Scilit:
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)Japanese Journal of Applied Physics, 1986
- Modeling of accumulation-mode MOSFET's in PolySilicon thin filmsIEEE Electron Device Letters, 1985
- Exponential band tails in polycrystalline semiconductor filmsPhysical Review B, 1985
- Physics of amorphous silicon based alloy field-effect transistorsJournal of Applied Physics, 1984
- Density of gap states of silicon grain boundaries determined by optical absorptionApplied Physics Letters, 1983
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978