Fabrication and characterization of quantum well wires grown on corrugated GaAs substrates by molecular beam epitaxy

Abstract
Single quantum wells were grown on GaAs triangular gratings by molecular beam epitaxy. Cross-sectional transmission electron microscopy revealed that the quantum wells had a triangular shape above the ridge of the grating. The photoluminescence spectra at 77 K showed strong anisotropy, indicating that the electrons are confined two dimensionally. The calculation confirmed that the electrons tend to be localized at the corner of the bent quantum well wires, and the effective width of the quantum well wire was estimated to be 30 nm.