Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 66-70
- https://doi.org/10.1016/0022-0248(89)90353-9
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasersJournal of Vacuum Science & Technology B, 1988
- Patterned quantum well semiconductor injection laser grown by molecular beam epitaxyApplied Physics Letters, 1988
- Orientation dependence of GaAs growth in low-pressure OMVPEJournal of Crystal Growth, 1987
- Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxyElectronics Letters, 1987
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodesJournal of Crystal Growth, 1987
- Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAsJournal of Vacuum Science & Technology B, 1986
- High quality molecular beam epitaxial growth on patterned GaAs substratesApplied Physics Letters, 1985
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977