Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique I. Rotation rate transients
Open Access
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 142-148
- https://doi.org/10.1016/0022-0248(91)90170-a
Abstract
No abstract availableKeywords
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