Composition control of InGaAsP in metalorganic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine
- 1 October 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 193 (3) , 293-299
- https://doi.org/10.1016/s0022-0248(98)00556-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBPJournal of Electronic Materials, 1996
- Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasersIEEE Journal of Quantum Electronics, 1996
- Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursorsJournal of Crystal Growth, 1994
- Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasersJournal of Electronic Materials, 1994
- MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratioJournal of Crystal Growth, 1992
- Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxyJournal of Electronic Materials, 1991
- The effect of supplemental t-butyl radicals on the pyrolysis of tertiarybutylarsine, tertiarybutylphosphine, and ditertiarybutylarsineJournal of Crystal Growth, 1989
- OMVPE growth mechanism for GaP using tertiarybutylphosphine and trimethylgalliumJournal of Crystal Growth, 1989
- Pyrolysis of tertiarybutylphosphineJournal of Electronic Materials, 1989
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988