Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers
- 1 February 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (2) , 87-91
- https://doi.org/10.1007/bf02655251
Abstract
No abstract availableKeywords
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