In 0.49 Ga 0.15 P/In 0.15 Ga 0.85 Asheterostructure pulsed doped-channelFETs
- 23 June 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (13) , 1094-1095
- https://doi.org/10.1049/el:19940721
Abstract
In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs were fabricated and evaluated by DC and microwave measurements. This pulsed doped-channel approach provides a higher carrier density and a higher breakdown voltage, as compared to the conventional modulation-doped approach. A gm of 207 mS/mm, an fT of 16.7 GHz, and an fmax of 31.6 GHz, were obtained with a 1 µm-long gate at 300 K.Keywords
This publication has 2 references indexed in Scilit:
- Selectively δ-doped quantum well transistor grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1988
- The delta-doped field-effect transistor (δFET)IEEE Transactions on Electron Devices, 1986