Selectively δ-doped quantum well transistor grown by gas-source molecular-beam epitaxy
- 15 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (6) , 3324-3327
- https://doi.org/10.1063/1.341513
Abstract
We report electrical measurements on structures generated by δ doping the AlGaAs barriers of a GaAs quantum well. These structures are made unique by quantum size effects that occur both in the δ‐doped barrier and in the GaAs well. Both the Hall‐effect and capacitance‐voltage measurements reveal that high‐density, 4×1012 cm−2, two‐dimensional electron gas forms in the well along with good mobility. We fabricate field‐effect transistors with this structure to obtain transconductances of 300 mS/mm.This publication has 10 references indexed in Scilit:
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