Quantum size effect in monolayer-doped heterostructures
- 15 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (8) , 4317-4320
- https://doi.org/10.1103/physrevb.37.4317
Abstract
We report molecular-beam-epitaxial growth of a new structure formed by monolayer doping the barrier of an As-GaAs heterojunction. Our investigations of these structures include the quantum Hall effect and variable temperature mobility measurements, which reveal enhancements in interface densities are achievable along with very high mobility.
Keywords
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