Improvement of two-dimensional electron gas concentration in selectively doped GaAs/N-AlGaAs heterostructures by atomic planar doping

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Abstract
Atomic planar doping of Si into an AlGaAs layer was successfully applied to molecular‐beam‐epitaxially grown selectively doped GaAs/N‐AlGaAs heterostructures in an attempt to improve the two‐dimensional electron gas concentration. The dependence of the electron gas characteristics on the atomic‐planar‐doping conditions such as sheet doping density, spacer thickness, and substrate temperature was investigated. A thirty percent improvement in electron gas concentration, up to a value of 1.2×1012 cm−2, was achieved with almost the same mobility of 3.5×104 cm2/V s as in a conventional structure. Correspondingly, the characteristics of high electron mobility transistors, fabricated on such planar‐doped GaAs/N‐AlGaAs heterostructures, were also improved.