Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4A) , L281
- https://doi.org/10.1143/jjap.24.l281
Abstract
Electronic states and transport properties of 2DEG were investigated in selectively Si-doped N-AlGaAs/GaAs/N-AlGaAs single quantum well (SQW) structures grown by MBE. The number of the quantum levels below Fermi energi in the SQW structures varied from one to three with increasing thickness of the GaAs quantum well layer from 60 to 1000 Å. The effect of unintentionally asymmetric Si-doping in the SQW structures due to the surface segregation of Si was found to be essential in explaining the observed results.Keywords
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