Sulphur implantation in GaAs
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 637-643
- https://doi.org/10.1016/0167-5087(83)90860-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Lattice incorporation of n-type dopants in GaAsApplied Physics Letters, 1982
- Electric properties and distribution of sulfur implants in GaAsJournal of Applied Physics, 1982
- Damage and lattice location studies of Si-implanted GaAsApplied Physics Letters, 1982
- Lattice location of low-Z impurities in medium-Z targets using ion-induced x rays. II. Phosphorus and sulfur implants in germanium single crystalsJournal of Applied Physics, 1974