Damage and lattice location studies of Si-implanted GaAs
- 15 May 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (10) , 890-892
- https://doi.org/10.1063/1.92937
Abstract
High‐resolution Rutherford backscattering and proton‐induced x‐ray emission with channeling have been used to evaluate damage and lattice site location of Si‐implanted GaAs. Semi‐insulating Cr‐doped GaAs (100) crystals were implanted at room temperature with 120‐keV Si ions to a dose of 5×1015 cm−2. The residual damage and the locations in the lattice, which the implant occupies, are determined after annealing the samples at 950 °C for 15 min. It is shown that 70±7% of the implanted Si occupies substitutional lattice sites.Keywords
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