Auger and electron energy-loss study of the Al/SiC interface
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 70-72
- https://doi.org/10.1063/1.93730
Abstract
Auger and electron energy-loss spectroscopies, as functions of Al coverage and annealing temperature, have been used to determine the mechanism of formation of the Al/SiC interface. Al deposited at room temperature forms quasi-metallic islands randomly distributed over the surface. Annealing at moderate temperature (≤600 °C) causes aggregation of Al at C-rich sites. At higher temperature, Al reacts with C (but not with Si) to form Al4C3.Keywords
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