Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods

This publication has 11 references indexed in Scilit:

• Defects in hydrogenated amorphous silicon-germanium alloys studied by photomodulation spectroscopy
  Physical Review B, 1991
• Mercury‐sensitized photochemical vapor deposition of amorphous silicon
  AIChE Journal, 1990
• Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon
  Applied Physics Letters, 1988
• Photomodulation spectroscopy of dangling bonds in doped and undoped a-Si:H
  Solid State Communications, 1988
• Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques
  Applied Physics Letters, 1986
• Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films
  Applied Physics Letters, 1985
• Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds
  Physical Review Letters, 1985
• Density of the gap states in undoped and doped glow discharge a-Si:H
  Solar Energy Materials, 1983
• Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
  Physical Review B, 1982
• Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
  Physical Review B, 1982