GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
- 1 April 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 288-291
- https://doi.org/10.1007/s11664-998-0401-z
Abstract
No abstract availableKeywords
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- Ti/Ni ohmic contacts to n-type gallium nitrideMaterials Science and Engineering: B, 1997
- Fabrication of GaN mesa structuresMRS Internet Journal of Nitride Semiconductor Research, 1996
- Liquid-Phase Epitaxy of Silicon Carbide at Temperatures of 1100°-1200°CSpringer Proceedings in Physics, 1992