Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy
- 1 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1532-1535
- https://doi.org/10.1016/s0925-9635(97)00114-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Molecular beam epitaxy growth and characterization of GaN and AlxGa1−xN on 6H-SiCJournal of Vacuum Science & Technology A, 1996
- Thermal expansion of gallium nitrideJournal of Applied Physics, 1994
- A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxyApplied Physics Letters, 1993
- Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiCJournal of Applied Physics, 1988